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 SSM3K318T
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS)
SSM3K318T
Load Switching Applications High-Speed Switching Applications
* * 4.5 V drive Low ON-resistance : RDS(ON) = 145 m (max) (@VGS = 4.5 V) : RDS(ON) = 107 m (max) (@VGS = 10 V)
2.90.2 0.95 +0.2 2.8-0.3 +0.2 1.6-0.1 0.40.1 0.15
Unit: mm
Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse
VDSS VGSS ID IDP PD (Note 1) Tch Tstg
60 20 2.5 5.0 700 150 -55 to 150
V
0.160.05
V A mW C C
0.70.05
0.95
Characteristic
Symbol
Rating
Unit
1.90.2
Absolute Maximum Ratings (Ta = 25C)
1: Gate
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Mounted on an FR4 board. (25.4 mm x 25.4 mm x 1.6 mm, Cu Pad: 645 mm2)
TSM
JEDEC JEITA TOSHIBA
2: Source 3: Drain
2-3S1A
Weight: 10 mg (typ.)
Electrical Characteristics (Ta = 25C)
Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching time Turn-on time Turn-off time Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth Yfs RDS (ON) Ciss Coss Crss Qg Qgs Qgd ton toff VDSF VDD = 30 V, IDS= 2.5 A VGS = 10 V VDD = 30 V, ID = 1.0 A, VGS = 0 to 4.5 V, RG = 10 ID = -2.5 A, VGS = 0 V (Note 2) VDS = 30 V, VGS = 0 V, f = 1 MHz Test Conditions ID = 10mA, VGS = 0 V ID = 10mA, VGS = -20 V VDS = 60 V, VGS = 0 V VGS = 16 V, VDS = 0 V VDS = 5 V, ID = 1 mA VDS = 5 V, ID = 2.0 A ID = 2.0 A, VGS = 10 V ID = 1.0 A, VGS = 4.5 V (Note 2) (Note 2) (Note 2) Min 60 35 1.8 3.7 Typ. 7.4 83.5 101 235 30.5 23.0 7.0 4.8 2.2 14.0 9.5 -0.83 Max 1 1 2.8 107 145 -1.2 ns V nC pF Unit V A A V S m
Drain-Source forward voltage
Note2: Pulse test
1
2009-04-09
00.1
SSM3K318T
Switching Time Test Circuit
(a) Test Circuit (b) VIN
OUT IN RG 4.5 V 10% 90%
4.5 V 0 10 s
0V
(c) VOUT
VDD
VDD
10% 90% tr ton tf toff
VDS (ON)
VDD = 30 V RG = 10 D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25C
Marking
3
Equivalent Circuit (top view)
3
KDX
1 2 1 2
Usage Consideration
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (1 mA for the SSM3K318T). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.
2
2009-04-09
SSM3K318T
ID - VDS
5 10 V Common Source Ta = 25 C 10 Common Source VDS = 5 V
ID - VGS
(A)
ID
ID
4.5V 3 3.5V
(A)
4
4.0 V
1 Ta = 100 C 0.1 25 C 0.01 - 25 C
Drain current
2
Drain current
1 VGS = 3.0 V 0 0 0.2 0.4 0.6 0.8 1.0
0.001
0.0001 0
1.0
2.0
3.0
4.0
5.0
Drain-source voltage
VDS
(V)
Gate-source voltage
VGS
(V)
RDS (ON) - VGS
300 ID =2.0A Common Source 300 Common Source Ta = 25C
RDS (ON) - ID
Drain-source ON-resistance RDS (ON) (m)
Drain-source ON-resistance RDS (ON) (m)
200
200
Ta = 100 C 100 25 C - 25 C
4.5 V 100 VGS = 10
0
0
10
20
0 0 1 2 3 4 5
Gate-source voltage
VGS
(V)
Drain current
ID
(A)
RDS (ON) - Ta
300 Common Source 3.0
Vth - Ta
Common Source VDS = 5 V ID = 1 mA
Drain-source ON-resistance RDS (ON) (m)
Vth (V) Gate threshold voltage
200 2.0 100 1.0A / 4.5 V ID = 2.0 A / VGS = 10 V 1.0 0 -50 0 -50
0
50
100
150
0
50
100
150
Ambient temperature
Ta
(C)
Ambient temperature
Ta
(C)
3
2009-04-09
SSM3K318T
|Yfs| - ID (S)
100 30 10 3 1 0.3 0.1 0.03 0.01 0.001 Common Source VDS = 5 V Ta = 25 C 10 Common Source VGS = 0 V D 1 G IDR
IDR - VDS
Yfs
Forward transfer admittance
Drain reverse current
IDR
(A)
S 0.1
0.01
100 C
25 C 0.01 0.1 1 10 0.001 0 -0.2 -0.4 -0.6
-25 C -0.8 -1.0 -1.2
Drain current
ID
(A)
Drain-source voltage
VDS
(V)
C - VDS
1000 1000 toff
t - ID
Common Source VDD = 30 V VGS = 0 to 4.5 V Ta = 25 C RG = 10
300
Ciss
(pF)
100
(ns)
tf 100
C
Capacitance
30
Coss Crss
Switching time
t
10 Common Source Ta = 25 C f = 1 MHz 1 10
10
ton
3
tr
1 0.1
100
1 0.01
0.1
1
10
Drain-source voltage
VDS
(V)
Drain current
ID
(A)
Dynamic Input Characteristic
10 Common Source ID = 2.5A Ta = 25C
(V) VGS
8
6
Gate-source voltage
VDD=30V
4
2
0
0
2
4
6
8
Total Gate Charge
Qg
(nC)
4
2009-04-09
SSM3K318T
Rth 1000
- tw
1000
PD - Ta
a: Mounted on FR4 Board (25.4mm x 25.4mm x 1.6mm , Cu Pad : 645 mm2) b: Mounted on FR4 Board (25.4mm x 25.4mm x 1.6mm , Cu Pad : 0.8 mm2x3)
Transient thermal impedance Rth (C/W)
b
Drain power dissipation PD (mW)
800 a
100
a
600
400
b
10 a: Mounted on FR4 Board (25.4mm x 25.4mm x 1.6mm , Cu Pad : 645 mm2) b: Mounted on FR4 Board (25.4mm x 25.4mm x 1.6mm , 2 Cu Pad : 0.8 mm x3) 0.01 0.1 1 10 100 1000
200
1 0.001
0 -40
-20
0
20
40
60
80
100 120 140 160
Pulse width
tw
(s)
Ambient temperature
Ta
(C)
5
2009-04-09
SSM3K318T
RESTRICTIONS ON PRODUCT USE
* Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. * Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. * Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. * The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. * ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. * Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.
6
2009-04-09


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